 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10502/D The RF Line Microwave Pulse Power Transistor Designed for 1025- 1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Industry Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized with 10 s, 1% Duty Cycle Pulses MRF10502 500 W (PEAK) 1025 - 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355J-02, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Peak (1) Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 29 1460 8.3 - 65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/C C C Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RJC Max 0.12 Unit C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 32 s, 2%.) Replaces MRF10500/D 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 65 65 3.5 -- -- -- -- -- -- -- -- 25 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 -- -- -- FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) Load Mismatch (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) GPB 8.5 40 9.0 45 -- -- dB % No Degradation in Output Power Z5 D.U.T. L1 C2 C3 C4 + + - C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT C1 -- 82 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Z1-Z9 -- Microstrip, See Details Board Material -- Teflon, Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper .700 .150 .625 .160 .081 1.725 .105 .650 1.123 .216 1.309 1.108 .081 .644 .365 .500 0.140 2.000 .355 .081 .100 Figure 1. Test Circuit Replaces MRF10500/D 2 POUT, OUTPUT POWER (WATTS) 600 450 300 f = 1090 MHz VCC = 50 Volts 150 0 15 30 45 60 75 100 115 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 1120 1150 ZOUT (ZOL*) 1090 1060 f = 1030 MHz f = 1030 MHz Zo = 10 1060 1090 Zin 1150 1120 POUT = 500 W Pk VCC = 50 V f MHz 1030 1060 1090 1120 1150 Zin OHMS 55.3 + j2.25 56.2 + j0.25 55.2 - j1.45 53.7 - j1.35 3.15 - j1.35 ZOL* (ZOUT) OHMS 62.6 + j1.89 2.56 + j2.09 2.12 + j2.29 21.9 + j2.15 91.6 + j1.62 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances Replaces MRF10500/D 3 PACKAGE DIMENSIONS -A- M U RADIUS Q 2 PL M 0.51 (0.020) 1 TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K M N Q R U INCHES MILLIMETERS MIN MAX MIN MAX 0.990 1.010 25.15 25.65 0.375 0.395 9.53 10.03 0.145 0.175 3.68 4.45 0.195 0.205 4.95 5.21 0.055 0.065 1.40 1.65 0.117 0.133 2.97 3.38 0.003 0.006 0.08 0.15 0.580 0.620 14.73 15.75 45 _REF 45 _REF 0.590 0.610 14.99 15.49 0.055 0.065 1.40 1.65 0.395 0.405 10.03 10.29 0.800 BSC 20.32 BSC KR 3 2 -B- D J H -T- SEA TING PLANE N E C STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE CASE 355J-02 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Replaces MRF10500/D 4 |
Price & Availability of MRF10502
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |